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 PMEG3010BEP_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 20 April 2009 9 of 13 NXP Semiconductors PMEG3010BEP 1 A low VF MEGA Schottky barrier recti?er 8. Test information The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: with IIFAV()= IM ×δ M de?ned as peak current, FAV() at DC, and with I IRMS = IM ×δ RMS de?ned as RMS current. 8.1 Quality information This product has been quali?ed in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. 9. Package outline Fig 13. Duty cycle de?nition = t1 t2 P t 006aaa812 duty cycle d t1 t2 IRMS = I Fig 14. Package outline SOD128 07-09-12 Dimensions in mm 1.1 0.9 0.22 0.10 0.6 0.3 5.0 4.4 4.0 3.6 1.9 1.6 2.7 2.3 1 2 |